AOT2N60/AOTF2N60
600V,2A N-Channel MOSFET
General Description
The AOT2N60 & AOTF2N60 have been fabricated using an advanced high voltage MOSFET process that is
designed to deliver high levels of performance and robustness in popular AC-DC applications.
By providing low R
DS(on)
, C
iss
and C
rss
along with guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply designs.
Features
V
DS
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
700V@150℃
2A
< 4.4Ω
TO-220
TO-220F
D
G
D
S
G
D
S
G
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
AOT2N60
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Avalanche Current
C
C
G
C
AOTF2N60
600
±30
2*
1.7*
8
2
60
120
5
Units
V
V
A
A
mJ
mJ
V/ns
W
W/
o
C
°
C
°
C
V
GS
C
T
C
=25°
T
C
=100°
C
I
D
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
, T
STG
T
L
Symbol
R
θJA
R
θCS
AOT2N60
65
0.5
1.7
74
0.6
2
1.7
Repetitive avalanche energy
Single plused avalanche energy
Peak diode recovery dv/dt
T
C
=25°
C
B
Power Dissipation
Derate above 25
o
C
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A,D
31
0.25
-55 to 150
300
AOTF2N60
65
--
4
Units
°
C/W
°
C/W
°
C/W
Maximum Case-to-sink
A
Maximum Junction-to-Case
R
θJC
* Drain current limited by maximum junction temperature.
1/6
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