AOT412/AOB412L
100V N-Channel MOSFET
General Description
The AOT412 & AOB412L are fabricated with SDMOS
TM
trench technology that combines excellent R
DS(ON)
with
low gate charge & low Q
rr
.The result is outstanding efficiency with controlled switching behavior. This
universal technology is well suited for PWM, load switching and general purpose applications.
Features
V
DS
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
R
DS(ON)
(at V
GS
= 7V)
100V
60A
< 15.8mΩ
< 19.4mΩ
TO220
TO-263
D
2
PAK
D
D
D
G
S
D
G
S
G
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Symbol
Parameter
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Continuous Drain
Current
Avalanche Current
C
Avalanche energy L=0.1mH
T
C
=25°
C
Power Dissipation
Power Dissipation
B
C
C
Maximum
100
±25
60
44
140
8.2
6.6
47
110
150
75
2.6
1.7
-55 to 175
Units
V
V
A
V
GS
T
C
=25°
C
T
C
=100°
C
T
A
=25°
C
T
A
=70°
C
I
D
I
DM
I
DSM
I
AS
,I
AR
E
AS
,E
AR
P
D
P
DSM
T
J
, T
STG
A
A
mJ
W
W
°
C
T
C
=100°
C
T
A
=25°
C
T
A
=70°
C
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Case
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
15
40
0.7
Max
18
48
1
Units
°
C/W
°
C/W
°
C/W
1/7
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SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
