AOT414
100V N-Channel MOSFET
General Description
The AOT414 is fabricated with SDMOS
TM
trench technology that combines excellent R
DS(ON)
with low gate
charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well
suited for PWM, load switching and general purpose applications.AOT414 and AOT414L are electrically
identical.
Features
V
DS
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
R
DS(ON)
(at V
GS
= 7V)
100V
43A
< 25mΩ
< 31mΩ
D
G
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
G
Pulsed Drain Current
Continuous Drain
Current
Avalanche Current
C
Repetitive avalanche energy L=0.1mH
T
C
=25°C
Power Dissipation
Power Dissipation
B
C
C
Maximum
100
±25
43
31
100
5.6
4.5
28
39
115
58
1.9
1.23
-55 to 175
Units
V
V
A
V
GS
T
C
=25°C
T
C
=100°C
T
A
=25°C
T
A
=70°C
I
D
I
DM
I
DSM
I
AR
E
AR
P
D
P
DSM
T
J
, T
STG
A
A
mJ
W
W
°C
T
C
=100°C
T
A
=25°C
T
A
=70°C
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Case
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
11.6
54
0.7
Max
13.9
65
1.3
Units
°C/W
°C/W
°C/W
1/7
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SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
