AOT416
100V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
I
AR
(A) Peak Avalanche Current
Power Dissipation (W)
200
150
T
A
=25°C
T
A
=100°C
T
A
=150°C
10
0.000001
T
A
=125°C
100
50
0
0
25
50
75
100
125
150
175
T
CASE
(°C)
Figure 13: Power De-rating (Note F)
0.00001
0.0001
0.001
Time in avalanche, t
A
(s)
Figure 12: Single Pulse Avalanche capability (Note
C)
50
40
Power (W)
30
20
10
50
40
30
20
10
0
0
25
50
75
100
125
150
175
T
CASE
(°C)
Figure 14: Current De-rating (Note F)
T
A
=25°C
Current rating I
D
(A)
17
5
2
10
0
0.01
1
100
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note G)
0
10000
18
10
Z
θJA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
1
R
θJA
=65°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
0.1
P
D
Single Pulse
0.01
0.001
0.01
0.1
1
10
T
on
T
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note G)
5/7
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