AOT424
N-Channel Enhancement Mode Field
Effect Transistor
General Description
The AOT424 uses advanced trench technology to provide excellent R
DS(ON)
, low gate charge and low
gate resistance. This device is ideally suited for use as a low side switch in CPU core power conversion.
Standard Product AOT424 is Pb-free (meets ROHS & Sony 259 specifications).
Features
V
DS
(V) = 30V
I
D
= 110A (V
GS
= 10V)
R
DS(ON)
< 4mΩ (V
GS
= 10V)
R
DS(ON)
< 5.5mΩ (V
GS
= 4.5V)
TO-220
D
G
S
G
D
S
Absolute Maximum Ratings T =25°C unless otherwise noted
A
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
B,G
Pulsed Drain Current
Avalanche Current
C
C
Maximum
30
±20
110
88
200
30
112
100
50
-55 to 175
Units
V
V
A
A
mJ
W
°C
V
GS
T
C
=25°C
G
B
T
C
=100°C
I
D
I
DM
I
AR
E
AR
P
D
T
J
, T
STG
Repetitive avalanche energy L=0.1mH
T
C
=25°C
Power Dissipation
B
T
C
=100°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Case
C
Symbol
t ≤ 10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
14.2
39
0.8
Max
20
50
1.5
Units
°C/W
°C/W
°C/W
www.freescale.net.cn
SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
