AOT4S60/AOB4S60/AOTF4S60
600V 4A
α
MOS
TM
Power Transistor
General Description
The AOT4S60 & AOB4S60 & AOTF4S60 have been fabricated using the advanced
αMOS
TM
high voltage
process that is designed to deliver high levels of performance and robustness in switching applications.
By providing low R
DS(on)
, Q
g
and E
OSS
along with guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply designs.
Features
V
DS
@ T
j,max
I
DM
R
DS(ON),max
Q
g,typ
E
oss
@ 400V
700V
16A
0.9Ω
6nC
1.5µJ
D
G
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
AOT4S60/AOB4S60
Symbol
Drain-Source Voltage
V
DS
600
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Avalanche Current
C
C
G
C
AOTF4S60
Units
V
V
V
GS
T
C
=25°
C
T
C
=100°
C
I
D
I
DM
I
AR
E
AR
E
AS
P
D
dv/dt
T
J
, T
STG
T
L
Symbol
R
θJA
R
θCS
83
0.67
4
3.7
±30
4*
3.7*
16
1.6
38
77
31
0.25
100
20
-55 to 150
300
AOT4S60/AOB4S60
65
0.5
1.5
AOTF4S60
65
--
4
A
A
mJ
mJ
W
W/
o
C
V/ns
°
C
°
C
Units
°
C/W
°
C/W
°
C/W
Repetitive avalanche energy
Single pulsed avalanche energy
T
C
=25°
C
B
Power Dissipation
Derate above 25
o
C
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt
H
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
J
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A,D
A
Maximum Case-to-sink
Maximum Junction-to-Case
R
θJC
* Drain current limited by maximum junction temperature.
1/6
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SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
