AOT502
Clamped N-Channel MOSFET
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Symbol
Parameter
Conditions
I
D
=10mA, V
GS
=0V
I
D
=1A, V
GS
=0V
V
DS
=16V, V
GS
=0V
V
DS
=0V, I
D
=250µA
V
DS
=0V, V
GS
=±10V
V
DS
=V
GS
, I
D
=250µA
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=30A
T
J
=125°C
V
DS
=5V, I
D
=30A
1.6
137
9.3
15.4
55
0.73
1
75
960
V
GS
=0V, V
DS
=15V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
185
65
10
18.5
V
GS
=10V, V
DS
=15V, I
D
=30A
2.7
4
V
GS
=10V, V
DS
=15V, R
L
=0.5Ω,
R
GEN
=3Ω
I
F
=30A, dI/dt=750A/µs
2
Min
33
36
20
Typ
Max
Units
V
STATIC PARAMETERS
BV
DSS(z)
Drain-Source Breakdown Voltage
BV
CLAMP
I
DSS(z)
BV
GSS
I
GSS
V
GS(th)
I
D(ON)
R
DS(ON)
g
FS
V
SD
I
S
Drain-Source Clamping Voltage
Zero Gate Voltage Drain Current
Gate-Source Voltage
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
Forward Transconductance
44
20
10
2.1
2.7
11.5
18.5
V
µA
V
µA
V
A
mΩ
S
V
A
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
I
S
=1A, V
GS
=0V
Diode Forward Voltage
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
1205
266
109
20
23.4
3.4
7
13.5
17.5
63
27
1450
345
155
30.0
28
4
10
SWITCHING PARAMETERS
Q
g
Total Gate Charge
Q
gs
Gate Source Charge
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
14
53.5
17.5
67
21
80
Body Diode Reverse Recovery Charge I
F
=30A, dI/dt=750A/µs
ns
nC
A. The value of R
θJA
is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The Power
dissipation P
DSM
is based on R
θJA
and the maximum allowed junction temperature of 150°C. The value in any given application depends on the
user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation P
D
is based on T
J(MAX)
=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=175°C. Ratings are based on low frequency and duty cycles to keep initial
T
J
=25°C.
D. The R
θJA
is the sum of the thermal impedence from junction to case R
θJC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
µs
pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T
J(MAX)
=175°C. The SOA curve provides a single pulse rating.
G. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C.
2/7
www.freescale.net.cn
SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
