AOTF409 参数 Datasheet PDF下载

AOTF409

General Description

P-Channel Enhancement Mode Field

Effect Transistor

The AOTF409/L uses advanced trench technology to provide excellent R

DS(ON)

, low gate charge and low gate

resistance. With the excellent thermal resistance of the TO220FL package, this device is well suited for high

current load applications.AOTF409 and AOTF409L are electrically identical.

Features

V

DS

(V) =-60V

I

D

= -24A

R

DS(ON)

< 40mΩ

R

DS(ON)

< 54mΩ

(V

GS

= -10V)

(V

GS

= -10V)

(V

GS

= -4.5V)

TO-220FL

D

G

G

D S

S

Absolute Maximum Ratings T

A

=25°C unless otherwise noted

Symbol

Parameter

V

DS

Drain-Source Voltage

V

GS

Gate-Source Voltage

Continuous Drain

Current

G

Pulsed Drain Current

Continuous Drain

Current

Avalanche Current

C

Repetitive avalanche energy L=0.1mH

T

C

=25°C

Power Dissipation

Power Dissipation

B

C

Maximum

-60

±20

-24

-17

-60

-5.4

-4.3

-37

68

43

21

2.16

1.38

-55 to 175

Units

V

V

A

T

C

=25°C

T

C

=100°C

C

I

D

I

DM

I

DSM

I

AR

E

AR

P

D

P

DSM

T

J

, T

STG

T

A

=25°C

T

A

=70°C

A

A

mJ

W

W

°C

T

C

=100°C

T

A

=25°C

T

A

=70°C

A

Junction and Storage Temperature Range

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient

A

Maximum Junction-to-Ambient

A D

Maximum Junction-to-Case

Symbol

t

≤

10s

Steady-State

Steady-State

R

θJA

R

θJC

Typ

10

48.5

2.9

Max

12

58

3.5

Units

°C/W

°C/W

°C/W

1/6

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