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AOTF450L 参数 Datasheet PDF下载

AOTF450L图片预览
型号: AOTF450L
PDF下载: 下载PDF文件 查看货源
内容描述: 200V , 5.8A N沟道MOSFET [200V, 5.8A N-Channel MOSFET]
分类和应用:
文件页数/大小: 5 页 / 511 K
品牌: SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
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AOTF450L
200V, 5.8A N-Channel MOSFET
General Description
The AOTF450L is fabricated using an advanced high voltage MOSFET process that is designed to deliver high
levels of performance and robustness in popular AC-DC applications.By providing low R
DS(on)
, C
iss
and C
rss
along
with guaranteed avalanche capability this part can be adopted quickly into new and existing offline power supply
designs.This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial
power supplies and LED backlighting.
Features
V
DS
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
250V@150℃
5.8A
< 0.7Ω
D
G
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Avalanche Current
C
C
G
C
Max
200
±30
5.8*
4.1*
12
1.9
54
108
5
27
0.18
-55 to 175
300
Max
65
5.6
Units
V
V
A
A
mJ
mJ
V/ns
W
W/
o
C
°
C
°
C
Units
°
C/W
°
C/W
V
GS
T
C
=25°
C
T
C
=100°
C
I
D
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
Repetitive avalanche energy
Single pulsed avalanche energy
Peak diode recovery dv/dt
T
C
=25°
C
B
Power Dissipation
Derate above 25
o
C
Junction and Storage Temperature Range
T
J
, T
STG
Maximum lead temperature for soldering
T
L
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
Parameter
Symbol
A,D
Maximum Junction-to-Ambient
R
θJA
Maximum Junction-to-Case
R
θJC
* Drain current limited by maximum junction temperature.
1/5
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