AOTF4N90 参数 Datasheet PDF下载

AOTF4N90

900V,4A N-Channel MOSFET

General Description

The AOTF4N90 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high

levels of performance and robustness in popular AC-DC applications.By providing low R

DS(on)

, C

iss

and C

rss

along

with guaranteed avalanche capability this parts can be adopted quickly into new and existing offline power supply

designs.

Features

V

DS

I

D

(at V

GS

=10V)

R

DS(ON)

(at V

GS

=10V)

1000V@150℃

4A

< 3.6Ω

D

G

S

C

Absolute Maximum Ratings T

A

=25° unless otherwise noted

Symbol

Parameter

Drain-Source Voltage

V

DS

Gate-Source Voltage

Continuous Drain

Current

Pulsed Drain Current

Avalanche Current

C

C

G

C

AOTF4N90

900

±30

4*

2.5*

16

2.3

79

158

5

37

0.3

-55 to 150

300

AOTF4N90

65

3.3

Units

V

V

A

A

mJ

mJ

V/ns

W

W/

o

C

°

C

°

C

Units

°

C/W

°

C/W

V

GS

C

T

C

=25°

T

C

=100°

C

I

D

I

DM

I

AR

E

AR

Repetitive avalanche energy

Single plused avalanche energy

E

AS

Peak diode recovery dv/dt

dv/dt

T

C

=25°

C

P

D

B

Power Dissipation

Derate above 25

o

C

Junction and Storage Temperature Range

T

J

, T

STG

Maximum lead temperature for soldering

T

L

purpose, 1/8" from case for 5 seconds

Thermal Characteristics

Parameter

Symbol

A,D

Maximum Junction-to-Ambient

R

θJA

Maximum Junction-to-Case

R

θJC

* Drain current limited by maximum junction temperature.

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