IRF3205Z/ZS/ZL
Features
l
l
l
l
l
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
G
HEXFET
®
Power MOSFET
D
V
DSS
= 55V
R
DS(on)
= 6.5mΩ
Description
This HEXFET
®
Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These features
combine to make this design an extremely efficient
and reliable device for use in a wide variety of
applications.
S
I
D
= 75A
TO-220AB
IRF3205Z
D
2
Pak
IRF3205ZS
Max.
110
78
75
440
170
TO-262
IRF3205ZL
Units
A
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V
(Package Limited)
Pulsed Drain Current
I
DM
P
D
@T
C
= 25°C Power Dissipation
Linear Derating Factor
V
GS
Gate-to-Source Voltage
E
AS (Thermally limited)
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
E
AS
(Tested )
W
W/°C
V
mJ
A
mJ
d
1.1
± 20
I
AR
E
AR
T
J
T
STG
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Ã
h
180
250
See Fig.12a, 12b, 15, 16
-55 to + 175
g
i
°C
300 (1.6mm from case )
10 lbf in (1.1N m)
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
R
θJA
Junction-to-Case
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient
y
y
Typ.
Max.
0.90
–––
62
40
Units
°C/W
i
i
–––
0.50
–––
–––
Junction-to-Ambient (PCB Mount)
j
1 / 12
www.freescale.net.cn
SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
