IRFR2307Z
IRFU2307Z
Features
Advanced Process Technology
l
Ultra Low On-Resistance
l
175°C Operating Temperature
l
Fast Switching
l
Repetitive Avalanche Allowed up to Tjmax
l
HEXFET
®
Power MOSFET
D
V
DSS
= 75V
R
DS(on)
= 16mΩ
Description
Specifically designed for Automotive applications,
this HEXFET
®
Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features com-
bine to make this design an extremely efficient and
reliable device for use in Automotive applications
and a wide variety of other applications.
G
S
I
D
= 42A
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 25°C
I
DM
Continuous Drain Current, V
GS
Pulsed Drain Current
D-Pak
IRFR2307Z
Max.
53
38
42
210
110
0.70
± 20
I-Pak
IRFU2307Z
Units
A
@ 10V
(Package Limited)
P
D
@T
C
= 25°C Power Dissipation
V
GS
Linear Derating Factor
Gate-to-Source Voltage
W
W/°C
V
mJ
A
mJ
E
AS (Thermally limited)
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
E
AS
(Tested )
I
AR
E
AR
T
J
T
STG
Avalanche Current
d
Ã
h
100
140
See Fig.12a, 12b, 15, 16
-55 to + 175
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
g
°C
300 (1.6mm from case )
10 lbf in (1.1N m)
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
R
θJC
R
θJA
R
θJA
Junction-to-Case
y
y
j
Parameter
Typ.
Max.
1.42
40
110
Units
°C/W
Junction-to-Ambient (PCB mount)
Junction-to-Ambient
j
ij
–––
–––
–––
HEXFET
®
is a registered trademark of International Rectifier.
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