IRFR/U4620PBF
HEXFET
®
Power MOSFET
Applications
l
High Efficiency Synchronous Rectification in SMPS
l
Uninterruptible Power Supply
l
High Speed Power Switching
l
Hard Switched and High Frequency Circuits
Benefits
l
Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l
Fully Characterized Capacitance and Avalanche
SOA
l
Enhanced body diode dV/dt and dI/dt Capability
l
Lead-Free
D
G
S
V
DSS
R
DS(on)
typ.
max.
I
D
D
D
200V
64m
:
78m
:
24A
S
G
G
D
S
DPak
IRFR4620PbF
G
D
IPAK
IRFU4620PbF
S
Gate
Drain
Source
Absolute Maximum Ratings
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
dv/dt
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Max.
24
17
100
144
0.96
± 20
54
-55 to + 175
300
Units
A
W
W/°C
V
V/ns
c
e
°C
Avalanche Characteristics
E
AS (Thermally limited)
I
AR
E
AR
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
c
d
c
i
113
See Fig. 14, 15, 22a, 22b,
mJ
A
mJ
Thermal Resistance
Symbol
R
θJC
R
θJA
R
θJA
Junction-to-Case
Junction-to-Ambient (PCB Mount)
Junction-to-Ambient
j
Parameter
Typ.
–––
–––
–––
Max.
1.045
50
110
Units
°C/W
1 / 11
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