IRF/B/S/SL4310
Static @ TJ = 25°C (unless otherwise specified)
Symbol
V(BR)DSS
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Min. Typ. Max. Units
100 ––– –––
––– 0.064 ––– V/°C Reference to 25°C, ID = 1mA
Conditions
V
VGS = 0V, ID = 250µA
V
/ T
∆
J
∆
(BR)DSS
RDS(on)
VGS(th)
IDSS
–––
2.0
5.6
7.0
4.0
20
VGS = 10V, ID = 75A
m
Ω
–––
V
VDS = VGS, ID = 250µA
Drain-to-Source Leakage Current
––– –––
µA VDS = 100V, VGS = 0V
––– ––– 250
––– ––– 200
––– ––– -200
V
DS = 100V, VGS = 0V, TJ = 125°C
GS = 20V
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Gate Input Resistance
nA
V
VGS = -20V
RG
–––
1.4
–––
f = 1MHz, open drain
Ω
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
Conditions
VDS = 50V, ID = 75A
nC ID = 75A
DS = 80V
160 ––– –––
S
Qg
––– 170 250
Qgs
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
–––
–––
–––
46
62
26
–––
–––
–––
V
Qgd
VGS = 10V
ns VDD = 65V
ID = 75A
td(on)
tr
––– 110 –––
td(off)
Turn-Off Delay Time
Fall Time
–––
–––
68
78
–––
–––
R = 2.6
Ω
G
tf
VGS = 10V
pF VGS = 0V
VDS = 50V
Ciss
Input Capacitance
––– 7670 –––
––– 540 –––
––– 280 –––
––– 650 –––
––– 720.1 –––
Coss
Output Capacitance
Reverse Transfer Capacitance
Crss
ƒ = 1.0MHz
Coss eff. (ER)
Coss eff. (TR)
VGS = 0V, VDS = 0V to 80V , See Fig.11
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
VGS = 0V, VDS = 0V to 80V , See Fig. 5
Diode Characteristics
Symbol
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
––– –––
A
MOSFET symbol
140
D
(Body Diode)
Pulsed Source Current
showing the
integral reverse
G
ISM
––– ––– 550
S
(Body Diode)
p-n junction diode.
VSD
trr
Diode Forward Voltage
––– –––
1.3
68
V
TJ = 25°C, IS = 75A, VGS = 0V
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
VR = 85V,
IF = 75A
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
45
55
82
ns
83
di/dt = 100A/µs
Qrr
120
nC
––– 120 180
––– 3.3 –––
IRRM
ton
Reverse Recovery Current
Forward Turn-On Time
A
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Calculated continuous current based on maximum allowable junction
Coss eff. (TR) is a fixed capacitance that gives the same charging time
temperature. Package limitation current is 75A
Repetitive rating; pulse width limited by max. junction
temperature.
as Coss while VDS is rising from 0 to 80% VDSS
Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS
.
.
Limited by TJmax, starting TJ = 25°C, L = 0.35mH
RG = 25Ω, IAS = 75A, VGS =10V. Part not recommended for use
above this value.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
Rθ is measured at TJ approximately 90°C
ISD ≤ 75A, di/dt ≤ 550A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
ꢀ Pulse width ≤ 400µs; duty cycle ≤ 2%.
2 / 11
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