IRFR/U3711
Static @ T
J
= 25°C (unless otherwise specified)
Symbol
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
V
GS(th)
I
DSS
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min
20
–––
–––
–––
1.0
–––
–––
–––
–––
–––
Typ
–––
0.022
5.2
6.7
–––
–––
–––
–––
–––
–––
Max Units
–––
–––
6.5
8.5
3.0
140
20
100
200
-200
nA
µA
V
Conditions
V
GS
= 0V, I
D
= 250µA
V
GS
= 10V, I
D
= 15A
V
GS
= 4.5V, I
D
V/°C Reference to 25°C, I
D
= 1mA
mΩ
V
e
= 12A
e
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 20V, V
GS
= 0V
V
DS
= 16V, V
GS
= 0V
V
DS
= 16V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
I
GSS
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol
g
fs
Q
g
Q
gs
Q
gd
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min
53
–––
–––
–––
–––
0.3
–––
–––
–––
–––
–––
–––
–––
Typ
–––
29
7.3
8.9
33
–––
12
220
17
12
2980
1770
280
Max Units
–––
44
–––
–––
–––
2.5
–––
–––
–––
–––
–––
–––
–––
pF
ns
Ω
V
DD
= 10V
I
D
= 30A
R
G
= 1.8Ω
V
GS
= 4.5V
V
GS
= 0V
V
DS
= 10V
nC
S
I
D
= 15A
V
DS
= 10V
Conditions
V
DS
= 16V, I
D
= 30A
V
GS
= 4.5V
V
GS
= 0V, V
DS
= 10V
e
e
ƒ = 1.0MHz
Avalanche Characteristics
Symbol
E
AS
I
AR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Ã
d
Min
–––
–––
–––
–––
–––
–––
–––
–––
Typ
–––
–––
Max
460
30
Units
mJ
A
Diode Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
t
rr
Q
rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Typ
–––
–––
0.88
0.82
50
61
48
65
Max Units
110
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 30A, V
GS
= 0V
T
J
= 125°C, I
S
= 30A, V
GS
= 0V
T
J
= 25°C, I
F
= 16A, V
R
= 10V
di/dt = 100A/µs
f
A
Ã
440
1.3
–––
75
92
72
98
V
ns
nC
ns
nC
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
e
e
e
e
T
J
= 125°C, I
F
= 16A, V
R
= 10V
di/dt = 100A/µs
2 / 10
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