IRFR/U540Z
3000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
20
VGS, Gate-to-Source Voltage (V)
ID= 21A
VDS = 80V
VDS= 50V
VDS= 20V
2500
16
C, Capacitance(pF)
2000
Ciss
12
1500
8
1000
4
500
Coss
Crss
1
10
100
0
0
0
10
20
30
40
50
60
QG Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
1000.0
1000
ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS (on)
100µsec
1msec
ISD , Reverse Drain Current (A)
100.0
TJ = 175°C
10.0
TJ = 25°C
1.0
100
10
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
0
1
10msec
DC
0.1
0.2
0.4
0.6
0.8
1.0
VGS = 0V
1.2
1.4
10
100
1000
VSD , Source-to-Drain Voltage (V)
VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4 / 11
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