IRL2203NS/L
l
l
l
l
l
l
l
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
100% R
G
Tested
HEXFET
®
Power MOSFET
D
V
DSS
= 30V
R
DS(on)
= 7.0mΩ
G
S
I
D
= 116A
Description
Advanced HEXFET
®
Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely low on-
resistance per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of applications.
The D
2
Pak is a surface mount power package capable of accommodating
die sizes up to HEX-4. It provides the highest power capability and the lowest
possible on-resistance in any existing surface mount package. The D
2
Pak
is suitable for high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRL2203NL) is available for low-profile applications.
D
2
Pak
IRL2203NS
TO-262
IRL2203NL
Absolute Maximum Ratings
Symbol
I
D
@ T
C
= 25°C
Parameter
Continuous Drain Current, V
GS
@ 10V
Max
116
82
400
3.8
180
i
Units
A
W
W
W/°C
V
A
mJ
V/ns
°C
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
I
DM
P
D
@T
A
= 25°C
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
P
D
@T
C
= 25°C Power Dissipation
V
GS
I
AR
E
AR
dv/dt
T
J
T
STG
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
e
Ã
1.2
± 16
60
18
5.0
-55 to + 175
300 (1.6mm from case)
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Symbol
R
θJC
R
θJA
Junction-to-Case
k
Parameter
Typ
Max
0.85
40
Units
°C/W
Junction-to-Ambient (PCB mount, steady state)
jk
–––
–––
1 / 10
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