Freescale
P-Channel 20-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
r
DS(on)
and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
AO4403/ MC4403
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
m( )
60 @ V
GS
= -4.5V
-20
80 @ V
GS
= -2.5V
150 @ V
GS
= -1.8V
I
D
(A)
-8.3
-6.7
-4.5
•
•
•
•
Low r
DS(on)
provides higher efficiency and
extends battery life
Low thermal impedance copper leadframe
SOIC-8 saves board space
Fast switching speed
High performance trench technology
1
2
3
4
8
7
6
5
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol Maximum Units
Drain-Source Voltage
V
DS
-20
V
Gate-Source Voltage
V
GS
±12
Continuous Drain Current
Pulsed Drain Current
b
a
a
o
T
A
=25 C
T
A
=70 C
o
o
I
D
I
DM
I
S
-8.3
-6.7
±50
-2.1
3.1
2.0
A
W
o
A
Continuous Source Current (Diode Conduction)
Power Dissipation
a
T
A
=25 C
T
A
=70 C
o
o
P
D
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Symbol
R
θJA
t <= 10 sec
Steady-State
Maximum
40
70
Units
o
o
C/W
C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
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1
SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
