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MC4456 参数 Datasheet PDF下载

MC4456图片预览
型号: MC4456
PDF下载: 下载PDF文件 查看货源
内容描述: N通道30 -V ( DS ) MOSFET高性能沟道技术 [N-Channel 30-V (D-S) MOSFET High performance trench technology]
分类和应用:
文件页数/大小: 3 页 / 291 K
品牌: SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
 浏览型号MC4456的Datasheet PDF文件第2页浏览型号MC4456的Datasheet PDF文件第3页  
Analog Power
Freescale
N-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
r
DS(on)
and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
Low r
DS(on)
provides higher efficiency and
extends battery life
Low thermal impedance copper leadframe
SOIC-8 saves board space
Fast switching speed
High performance trench technology
AM4434N
AO4456/MC4456
PRODUCT SUMMARY
V
DS
(V)
r
DS (on )
m(Ω)
6 @ V
GS
= 4.5V
30
8 @ V
GS
= 2.5V
I
D
(A)
18.6
16.1
1
2
3
4
8
7
6
5
AB SOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parame te r
Symbol Maximum Units
Drain-Source Voltage
V
DS
30
V
Gate-Source Voltage
V
GS
12
Continuous Drain Current
Pulsed Drain Current
b
a
a
o
T
A
=25 C
T
A
=70 C
o
o
I
D
I
DM
I
S
18.6
15.7
60
2.9
3.1
2.2
-55 to 150
A
W
o
A
Continuous Source Current (Diode Conduction)
Power Dissipation
a
T
A
=25 C
T
A
=70 C
o
o
P
D
T
J
, T
stg
Operating Junction and Storage Temperature Range
C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Symbol
t <= 10 sec
Steady State
R
θJA
Maximum
40
80
Units
o
C/W
o
C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
1
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