Freescale
Dual N-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize
High Cell Density process. Low r
DS(on)
assures
minimal power loss and conserves energy, making
this device ideal for use in power management
circuitry. Typical applications are PWMDC-DC
converters, power management in portable and
battery-powered products such as computers,
printers, battery charger, telecommunication power
system, and telephones power system.
•
•
•
•
Low r
DS(on)
Provides Higher Efficiency and
Extends Battery Life
Miniature SO-8 Surface Mount Package
Saves Board Space
High power and current handling capability
Low side high current DC-DC Converter
applications
AO4900 / MC4900
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
m(Ω)
34 @ V
GS
= 10V
30
41 @ V
GS
= 4.5V
I
D
(A)
6.9
6.0
1
2
3
4
8
7
6
5
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
o
C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
30
Drain-Source Voltage
V
DS
V
GS
Gate-Source Voltage
± 20
Continuous Drain Current
Pulsed Drain Current
b
Continuous Source Current (Diode Conduction)
a
Power Dissipation
a
a
Units
V
T
A
=25
o
C
T
A
=70
o
C
I
D
I
DM
I
S
± 6.9
± 5.6
± 40
1.7
2.1
1.3
-55 to 150
A
W
o
A
T
A
=25
o
C
T
A
=70 C
o
P
D
T
J
, T
stg
Operating Junction and Storage Temperature Range
C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Symbol
R
θJA
Maximum
62.5
110
Units
o
o
t <= 10 sec
Steady-State
C/W
C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
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SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
