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MC6800 参数 Datasheet PDF下载

MC6800图片预览
型号: MC6800
PDF下载: 下载PDF文件 查看货源
内容描述: N通道30 -V ( DS ) MOSFET高性能沟道技术 [N-Channel 30-V (D-S) MOSFET High performance trench technology]
分类和应用:
文件页数/大小: 5 页 / 454 K
品牌: SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
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Freescale
AO68 00 / MC68 00
Typical Electrical Characteristics (N-Channel)
100
r
DS(ON)
- On-Resistance (OHM)
0.8
1
1.2
1.4
10
I
S
- Source CURRENT (A
1
0.1
0.01
0.001
0.0001
0
0.2
0.4
0.6
0.07
0.06
0.05
0.04
0.03
0.02
0.01
2
2.5
3
3.5
4
4.5
5
V
GS
- Gate-to-Source Voltage (V)
T
A
= 125
o
C
25
o
C
V
SD
- Source-to-DrainVoltage (V)
Source-Drain Diode Forward Voltage
30
On-Resistance vs.Gate-to Source Voltage
1.8
1.6
V
GS(th)
- Variance (V)
1.4
1.2
1
0.8
0.6
0.4
0.2
0
-50
-25
0
25
50
75
100
125
150
T
J
- Temperature (
o
C)
I
D
= 250
µ
A
20
Power (W)
10
0
0.01
0.1
1
Time (sec)
10
100
1
Normalized Effective Transient Thermal
Threshold Voltage
D =0.5
Single Pulse Power
0.2
R
θJA
(t) = r(t) * R
θJA
R
θJA
= 125 °C/W
0.1
Impedance
0.1
0.05
0.02
0.01
P(pk
t
1
t
2
SINGLE PULSE
0.01
T
J
- T
A
= P *
R
θJA
(t)
Duty Cycle, D = t
1
/t
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
4
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