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SQ4284EY 参数 Datasheet PDF下载

SQ4284EY图片预览
型号: SQ4284EY
PDF下载: 下载PDF文件 查看货源
内容描述: 汽车双N沟道40 V ( DS ) 175 ℃的MOSFET [Automotive Dual N-Channel 40 V (D-S) 175 °C MOSFET]
分类和应用:
文件页数/大小: 10 页 / 850 K
品牌: SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
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SQ4284EY
Automotive Dual N-Channel
40 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
() at V
GS
= 10 V
R
DS(on)
() at V
GS
= 4.5 V
I
D
(A)
Configuration
SO-8
S
1
G
1
S
2
G
2
1
2
3
4
Top View
8
7
6
5
D
1
D
1
D
2
G
1
D
2
S
1
N-Channel MOSFET
S
2
N-Channel MOSFET
G
2
D
1
40
0.028
0.032
8
Dual
D
2
FEATURES
TrenchFET
®
Power MOSFET
AEC-Q101 Qualified
100 % R
g
and UIS Tested
Material categorization:
For definitions of compliance please see
www.freescale.net.cn
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
SO-8
SQ4284EY-T1-GE3
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Diode Conduction)
Pulsed Drain Current
a
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
L = 0.1 mH
T
C
= 25 °C
T
C
= 125 °C
T
C
= 25 °C
a
T
C
= 125 °C
SYMBOL
V
DS
V
GS
I
D
I
S
I
DM
I
AS
E
AS
P
D
T
J
, T
stg
LIMIT
40
± 20
8
5.4
3.5
32
48
115
3.9
1.3
- 55 to + 175
mJ
W
°C
A
UNIT
V
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Foot (Drain)
Notes
a. Pulse test; pulse width
300 μs, duty cycle
2 %.
b. When mounted on 1" square PCB (FR-4 material).
PCB Mount
b
SYMBOL
R
thJA
R
thJF
LIMIT
120
38
UNIT
°C/W
1 / 10
www.freescale.net.cn