SQ4532EY
Automotive N-and P-Channel
30 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
N-CHANNEL
V
DS
(V)
R
DS(on)
() at V
GS
= ± 10 V
R
DS(on)
() at V
GS
= ± 4.5 V
I
D
(A)
Configuration
30
0.055
0.100
5.6
P-CHANNEL
- 30
0.070
0.190
- 5.3
N- and P-Pair
FEATURES
•
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFET
• AEC-Q101 Qualified
c
• 100 % R
g
and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
SO-8
S
1
G
1
S
2
G
2
1
2
3
4
Top View
8
7
6
5
D
1
D
1
D
2
D
2
D
1
S
2
G
2
G
1
S
1
N-Channel MOSFET
D
2
P-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
SO-8
SQ4532EY-T1-GE3
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Diode Conduction)
Pulsed Drain Current
a
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
L = 0.1 mH
T
C
= 25 °C
T
C
= 125 °C
T
C
= 25 °C
T
C
= 125 °C
SYMBOL
V
DS
V
GS
I
D
I
S
I
DM
I
AS
E
AS
P
D
T
J
, T
stg
5.6
3.2
3
22
10
5
3.3
1.1
- 55 to + 175
N-CHANNEL
30
± 20
- 5.3
-3
-3
- 21
-9
4
3.3
1.1
mJ
W
°C
A
P-CHANNEL
- 30
UNIT
V
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Foot (Drain)
Notes
a. Pulse test; pulse width
300 μs, duty cycle
2 %.
b. When mounted on 1" square PCB (FR4 material).
c. Parametric verification ongoing.
PCB
Mount
b
SYMBOL
R
thJA
R
thJF
N-CHANNEL
110
45
P-CHANNEL
105
45
UNIT
°C/W
1 / 15
www.freescale.net.cn
SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
