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SQD50N03-06P 参数 Datasheet PDF下载

SQD50N03-06P图片预览
型号: SQD50N03-06P
PDF下载: 下载PDF文件 查看货源
内容描述: 汽车N沟道30 V (D -S ), 175 ℃的MOSFET [Automotive N-Channel 30 V (D-S) 175 °C MOSFET]
分类和应用:
文件页数/大小: 9 页 / 744 K
品牌: SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
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SQD50N03-06P
Automotive N-Channel
30 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
() at V
GS
= 10 V
R
DS(on)
() at V
GS
= 4.5 V
I
D
(A)
Configuration
30
0.0060
0.0085
50
Single
D
FEATURES
• TrenchFET
®
Power MOSFET
• 100 % R
g
and UIS Tested
• AEC-Q101 Qualified
• Material categorization:
For definitions of compliance please see
TO-252
G
Drain Connected to Tab
S
G
D
S
Top View
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
TO-252
SQD50N03-06P-GE3
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
a
Continuous Source Current (Diode Conduction)
a
Pulsed Drain Current
b
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
b
Operating Junction and Storage Temperature Range
L = 0.1 mH
T
C
= 25 °C
T
C
= 125 °C
T
C
= 25 °C
T
C
= 125 °C
SYMBOL
V
DS
V
GS
I
D
I
S
I
DM
I
AS
E
AS
P
D
T
J
, T
stg
LIMIT
30
± 20
50
50
50
200
45
101
83
27
- 55 to + 175
mJ
W
°C
A
UNIT
V
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
Notes
a. Package limited.
b. Pulse test; pulse width
300 μs, duty cycle
2 %.
c. When mounted on 1" square PCB (FR-4 material).
PCB Mount
c
SYMBOL
R
thJA
R
thJC
LIMIT
50
1.8
UNIT
°C/W
1/9
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