SQD50N04-5m6
Automotive N-Channel
40 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
() at V
GS
= 10 V
I
D
(A)
Configuration
40
0.0056
50
Single
FEATURES
•
•
•
•
•
TrenchFET
®
Power MOSFET
Package with Low Thermal Resistance
AEC-Q101 Qualified
100 % R
g
and UIS Tested
Material categorization:
For definitions of compliance please see
www.freescale.net.cn
D
TO-252
Drain Connected to Tab
G
G
D
Top View
S
N-Channel MOSFET
S
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
TO-252
SQD50N04-5m6-GE3
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Diode Conduction)
a
Pulsed Drain Current
b
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
b
Operating Junction and Storage Temperature Range
L = 0.1 mH
T
C
= 25 °C
T
C
= 125 °C
T
C
= 25 °C
a
T
C
= 125 °C
SYMBOL
V
DS
V
GS
I
D
I
S
I
DM
I
AS
E
AS
P
D
T
J
, T
stg
LIMIT
40
± 20
50
45
50
200
40
80
71
23
- 55 to + 175
mJ
W
°C
A
UNIT
V
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
Notes
a. Package limited.
b. Pulse test; pulse width
300 μs, duty cycle
2 %.
c. When mounted on 1" square PCB (FR-4 material).
PCB
Mount
c
SYMBOL
R
thJA
R
thJC
LIMIT
50
2.1
UNIT
°C/W
1/7
www.freescale.net.cn
SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
