SQD50P03-07
Automotive P-Channel
60 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
10
R
DS(on)
- On-Resistance (Normalized)
2.0
I
D
= 45 A
V
GS
= 10 V
V
GS
-
Gate-to-Source
Voltage (V)
8
I
D
= 75 A
V
DS
= 15 V
1.7
6
1.4
4
1.1
2
0.8
0
0
20
40
60
80
Q
g
- Total
Gate
Charge (nC)
100
0.5
- 50 - 25
0
25
50
75 100 125
T
J
- Junction Temperature (°C)
150
175
Gate Charge
100
On-Resistance vs. Junction Temperature
0.05
10
I
S
-
Source
Current (A)
T
J
= 150
°C
1
R
DS(on)
- On-Resistance (Ω)
0.04
0.03
0.1
T
J
= 25
°C
0.02
T
J
= 150
°C
0.01
T
J
= 25
°C
0.01
0.001
0.0
0.00
0.2
0.4
0.6
0.8
1.0
V
SD
-
Source-to-Drain
Voltage (V)
1.2
0
2
4
6
8
V
GS
-
Gate-to-Source
Voltage (V)
10
Source Drain Diode Forward Voltage
1.2
- 30
On-Resistance vs. Gate-to-Source Voltage
V
DS
- Drain-to-Source Voltage (V)
0.9
V
GS(th)
Variance (V)
- 32
I
D
= 10 mA
0.6
I
D
= 250 μA
- 34
0.3
I
D
= 5 mA
- 36
0.0
- 0.3
- 38
- 0.6
- 50 - 25
0
25
50
75
100
125
150
175
T
J
- Temperature (°C)
- 40
- 50 - 25
0
25
50
75 100 125
T
J
- Junction Temperature (°C)
150
175
Threshold Voltage
Drain Source Breakdown vs. Junction Temperature
4/9
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