SQD50P04-13L
Automotive P-Channel
40 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
100
V
GS
= 10 V thru 5 V
80
I
D
- Drain Current (A)
I
D
- Drain Current (A)
80
100
60
60
40
4V
40
25 °C
20
3V
0
0
3
6
9
12
15
20
T
C
= 125 °C
0
0
2
- 55 °C
4
6
8
10
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
0.05
Transfer Characteristics
5000
R
DS(on)
- On-Resistance ()
0.04
C - Capacitance (pF)
4000
C
iss
3000
0.03
V
GS
= 4.5 V
0.02
V
GS
= 10 V
0.01
2000
1000
C
rss
C
oss
0.00
0
20
40
60
80
100
I
D
- Drain Current (A)
0
0
5
10
15
20
25
30
35
40
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
10
I
D
= 50 A
V
GS
- Gate-to-Source Voltage (V)
2.0
V
GS
= 10 V
I
D
= 30 A
1.7
R
DS(on)
- On-Resistance
V
DS
= 20 V
Capacitance
8
(Normalized)
6
1.4
4
1.1
2
0.8
0
0
10
20
30
40
50
60
0.5
- 50
- 25
0
25
50
75
100
125
150
175
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
3/9
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SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
