SUD06N10-255L
Automotive N-Channel
100 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V
DS
(V)
100
r
DS(on)
(W)
0.200 @ V
GS
= 10 V
0.225 @ V
GS
= 4.5 V
I
D
(A)
6.5
6.0
Q
g
(Typ)
2.7
27
TO-252
D
Drain Connected to Tab
G
D
S
G
Top View
Order Number:
SUD06N10-225L
SUD06N10-225L—E3 (lLead (Pb)-Free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 175_C)
b
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Avalanche Current
Repetitive Avalanche Energy (Duty Cycle
v
1%)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
L = 0.1 mH
T
C
= 25_C
T
A
= 25_C
T
C
= 25_C
T
C
= 125_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
I
AR
E
AR
P
D
T
J
, T
stg
Limit
100
"
20
6.5
3.75
8.0
6.5
5.0
1.25
20
b
1.5a
−55
to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
a
J
ti t A bi t
Junction-to-Case
Notes
a. Surface Mounted on 1” x1” FR4 Board.
b. See SOA curve for voltage derating.
t
v
10 sec
Steady State
Symbol
R
thJA
R
thJC
Typical
40
80
6.0
Maximum
50
100
7.5
Unit
_C/W
C/W
1/5
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