SUD09P10-195
P-Channel 100 V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
- 100
R
DS(on)
(Ω)
0.195 at V
GS
= - 10 V
0.210 at V
GS
= - 4.5 V
I
D
(A)
- 8.8
- 8.5
Q
g
(Typ.)
11.7
FEATURES
•
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFET
• 100 % R
g
and UIS Tested
APPLICATIONS
• Power Switch
• DC/DC Converters
TO-252
S
G
Drain Connected to Tab
G
D
S
D
P-Channel MOSFET
Top View
Ordering Information:
SUD09P10-195-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS
T
C
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
Pulsed Drain Current
Avalanche Current
Single Avalanche Energy
Maximum Power
a
Symbol
V
DS
V
GS
T
C
= 25 °C
T
C
= 70 °C
I
D
I
DM
I
AS
L = 0.1 mH
T
C
= 25 °C
T
A
= 25 °C
c
E
AS
P
D
T
J
, T
stg
Limit
- 100
± 20
- 8.8
- 7.1
- 15
- 18
16.2
32.1
b
2.5
- 55 to 150
Unit
V
A
mJ
W
°C
Dissipation
a
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB Mount)
Junction-to-Case (Drain)
Notes:
a. Duty cycle
≤
1 %.
b. See SOA curve for voltage derating.
c. When Mounted on 1" square PCB (FR-4 material).
c
Symbol
R
thJA
R
thJC
Limit
50
3.9
Unit
°C/W
1/6
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