SUD10P06-280L
P-Channel 60 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V
DS
(V)
- 60
R
DS(on)
(Ω)
0.170 at V
GS
= - 10 V
0.280 at V
GS
= - 4.5 V
I
D
(A)
- 10
-8
FEATURES
• TrenchFET
®
Power MOSFETs
• 175 °C Rated Maximum Junction Temperature
RoHS
COMPLIANT
S
TO-252
G
Drain Connected to Tab
G
D
S
D
P-Channel MOSFET
Top View
Ordering Information:
SUD10P06-280L-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS
T
C
= 25 °C, unless otherwise noted
Parameter
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
L = 0.1 mH
T
C
= 25 °C
T
A
= 25 °C
T
C
= 25 °C
T
C
= 100 °C
Symbol
V
GS
I
D
I
DM
I
S
I
AS
E
AS
P
D
T
J
, T
stg
Limit
± 20
- 10
-7
- 20
- 10
- 10
5
37
2
a
- 55 to 175
mJ
W
°C
A
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
a
Junction-to-Case
Notes:
a. Surface Mounted on FR4 board.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm.
FR4 Board Mount
Free Air
Symbol
R
thJA
R
thJC
Typical
60
120
3.7
Maximum
70
140
4.0
°C/W
Unit
1/7
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SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
