SUD15N06-90L
N-Channel
60 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V
DS
(V)
60
FEATURES
I
D
(A)
15
14
r
DS(on)
(W)
0.065 @ V
GS
= 10 V
0.090 @ V
GS
= 4.5 V
D
TrenchFETr Power MOSFET
D
175_C Maximum Junction
Temperature
Pb-free
Available
D
TO-252
G
Drain Connected to Tab
G
D
S
S
N-Channel MOSFET
Top View
Ordering Information: SUD15N06-90L
SUD15N06-90L—E3 (Lead (Pb)-Free)
ABSOLUTE MAXIMUM RATINGS (T
C
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Gate-Source Voltage
Continuous Drain Current (T
J
= 175_C)
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Avalanche Current
Repetitive Avalanche Energy (Duty Cycle
v
1%)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
L = 0.1 mH
T
C
= 25_C
T
A
= 25_C
T
C
= 25_C
T
C
= 100_C
Symbol
V
GS
I
D
I
DM
I
S
I
AR
E
AR
P
D
T
J
, T
stg
Limit
"20
15
12
30
15
15
11
37
2
−55
to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient Free Air, FR4 Board Mount
Junction-to-Case
Notes:
a. 1.36 x 2.1 surface mounted on 1” x 1” FR4 Board.
Symbol
R
thJA
R
thJC
Typical
60
3.3
Maximum
70
4.0
Unit
_C/W
1/6
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