SUD23N06-31
N-Channel
60 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V
DS
(V)
60
R
DS(on)
()
0.031 at V
GS
= 10 V
0.045 at V
GS
= 4.5 V
I
D
(A)
a
9.1
7.6
Q
g
(Typ.)
6.5 nC
FEATURES
•
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFET
• 100 % R
g
and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
TO-252
• DC/DC Converters
D
G
Drain Connected to Tab
G
D
S
S
N-Channel MOSFET
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View
Ordering Information:
SUD23N06-31-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
Continuous Drain Current (T
J
= 150 °C)
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Avalanche Energy
T
C
= 25 °C
T
A
= 25 °C
L = 0.1 mH
T
C
= 25 °C
Maximum Power Dissipation
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Operating Junction and Storage Temperature Range
T
J
, T
stg
P
D
I
DM
I
S
I
AS
E
AS
I
D
Symbol
V
DS
V
GS
Limit
60
± 20
21.4
17.1
9.1
a
7.6
a
50
20.8
3.8
a
20
20
31.25
20
5.7
a
3.6
a
- 55 to 150
°C
W
mJ
A
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Case
Notes:
a. Surface mounted on 1" x 1" FR4 board, t
10 s.
t
10 s
Steady State
Symbol
R
thJA
R
thJC
Typical
18
3.2
Maximum
22
4.0
Unit
°C/W
1/9
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