SUD30N04-10
N-Channel
40 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V
(BR)DSS
(V)
40
FEATURES
I
D
(A)
30
a
30
a
r
DS(on)
(W)
0.010 @ V
GS
= 10 V
0.014 @ V
GS
= 4.5 V
D
TrenchFETr Power MOSFET
D
175_C Maximum Junction Temperature
D
100% R
g
Tested
D
TO-252
G
Drain Connected to Tab
G
D
S
S
N-Channel MOSFET
Top View
Order Number:
SUD30N04-10
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 175_C)
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche
Power Dissipation
Operating Junction and Storage Temperature Range
Energy
b
L = 0.1 mH
T
C
= 25_C
T
C
= 25_C
T
C
= 100_C
Symbol
V
DS
V
GS
I
D
I
DM
I
AR
E
AR
P
D
T
J
, T
stg
Limit
40
"20
30
a
30
a
120
50
125
97
c
- 55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
PCB Mount
d
Junction-to-Ambient
J
ti t A bi t
Junction-to-Case
Notes:
a. Package limited.
b. Duty cycle
v
1%.
c. See SOA curve for voltage derating.
d. Surface mounted on 1” FR4 board.
Free Air
R
thJA
R
thJC
Symbol
Typical
45
110
1.5
Maximum
55
125
1.8
Unit
_C/W
C/W
1/4
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