SUD35N10-26P
N-Channel
100 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V
DS
(V)
100
r
DS(on)
(Ω)
0.026 at V
GS
= 10 V
I
D
(A)
a
35
Q
g
(Typ)
31 nC
FEATURES
• TrenchFET
®
Power MOSFET
• 100 % UIS Tested
RoHS
COMPLIANT
APPLICATIONS
• Primary Side Switch
TO-252
D
Drain Connected to Tab
G
G
D
S
Top View
Ordering Information:
SUD35N10-26P-E3 (Lead (Pb)-free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
Continuous Drain Current (T
J
= 175 °C)
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Pulsed Drain Current
Continuous Source-Drain Diode Current
Avalanche Current Pulse
Single Pulse Avalanche Energy
T
C
= 25 °C
T
A
= 25 °C
L = 0.1 mH
T
C
= 25 °C
Maximum Power Dissipation
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Operating Junction and Storage Temperature Range
T
J
, T
stg
P
D
I
DM
I
S
I
AS
E
AS
I
D
Symbol
V
DS
V
GS
Limit
100
± 20
35
32
12
b, c
10
b, c
40
50
e
6.9
b, c
33
55
83
58
8.3
b, c
5.8
b, c
- 55 to 175
°C
W
mJ
A
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Maximum
Junction-to-Ambient
b, d
t
≤
10 s
Steady State
Maximum Junction-to-Case
Symbol
R
thJA
R
thJC
Typical
15
1.5
Maximum
18
1.8
Unit
°C/W
Notes:
a. Based on T
C
= 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 50 °C/W.
e. Calculated based on maximum junction temperature. Package limitation current is 50 A.
1/9
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