SUD50N024-09P
N-Channel
22 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V
DS
(V)
24
c
FEATURES
I
D
(A)
d
49
36
D
r
DS(on)
(W)
0.0095 @ V
GS
= 10 V
0.017 @ V
GS
= 4.5 V
D
TrenchFETr Power MOSFET
D
175_C Junction Temperature
D
PWM Optimized for High Efficiency
APPLICATIONS
D
High-Side Synchronous Buck DC/DC
Conversion
−
Desktop
−
Server
TO-252
Drain Connected to Tab
G
D
S
G
Top View
S
Ordering Information: SUD50N024-09P
SUD50N024-09P—E3 (Lead Free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Pulse Voltage
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Avalanche Current, Single Pulse
Avalanche Energy, Single Pulse
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
C
= 25_C
L = 0.1 mH
T
C
= 25_C
T
C
= 100_C
Symbol
V
DS(pulse)
V
DS
V
GS
I
D
I
DM
I
S
I
AS
E
AS
P
D
T
J
, T
stg
Limit
24
C
22
"20
49d
34
d
100
4.3
29
42
6.5
a
39.5
−55
to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction to Ambient
a
Junction-to-Ambient
Maximum Junction-to-Case
t
v
10 sec
Steady State
Symbol
R
thJA
R
thJC
Typical
19
40
3.1
Maximum
23
50
3.8
Unit
_C/W
C/W
Notes
a. Surface Mounted on FR4 Board, t
v
10 sec.
b. Limited by package
c. Pulse condition: T
A
= 105_C, 50 ns, 300 kHz operation
d. Calculation based on maximum allowable Junction Temperature. Package limitation current is 25 A.
1/5
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