SUD50N025-09BP
N-Channel 25-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
25
FEATURES
I
D
(A)
a, e
62
52
r
DS(on)
(W)
0.0086 @ V
GS
= 10 V
0.012 @ V
GS
= 4.5 V
Q
g
(Typ)
18.5
18 5 nC
D
TrenchFETr Power MOSFET
D
100% R
g
Tested
D
RoHS Compliant
APPLICATIONS
D
DC/DC Conversion, High-Side
– Desktop PC
COMPLIANT
RoHS
TO-252
D
Drain Connected to Tab
G
D
S
G
Top View
Ordering Information: SUD50N025-09BP—E3 (Lead (Pb)-free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25_C
Continuous Drain Current (T
J
= 175_C)
T
C
= 70_C
T
A
= 25_C
T
A
= 70_C
Pulsed Drain Current
Continuous Source-Drain Diode Current
Source Drain
Avalanche Current Pulse
Single Pulse Avalanche Energy
L = 0 1 mH
0.1
T
C
= 25_C
Maximum Power Dissipation
T
C
= 70_C
T
A
= 25_C
T
A
= 70_C
Operating Junction and Storage Temperature Range
T
J
, T
stg
P
D
T
C
= 25_C
T
A
= 25_C
I
DM
I
S
I
AS
E
AS
I
D
Symbol
V
DS
V
GS
Limit
25
"
20
Unit
V
62
e
51
e
26
b, c
22
b, c
100
37
6.7
b, c
28
39.2
55
39
10
b, c
7
b, c
–55 to 175
_C
W
mJ
A
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
b, d
Maximum Junction-to-Case
t
p
10 sec
Steady State
Symbol
R
thJA
R
thJC
Typical
12
2.2
Maximum
15
2.7
Unit
_C/W
Notes:
a. Based on T
C
= 25_C.
b. Surface mounted on 1” x 1” FR4 board.
c. t = 10 sec
d. Maximum under steady state conditions is 50
_C/W.
e. Calculated based on maximum junction temperature. Package limitation current is 50 A.
1/7
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