SUD50N02-06P
N-Channel
20 V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
V
DS
(V)
20
R
DS(on)
(Ω)
0.0060 at V
GS
= 10 V
0.0095 at V
GS
= 4.5 V
I
D
(A)
a
26
21
•
•
•
•
•
TrenchFET
®
Power MOSFET
175 °C Junction Temperature
PWM Optimized for High Efficiency
100 % R
g
Tested
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
TO-252
• Synchronous Buck DC/DC Conversion
- Desktop
- Server
D
Drain Connected to Tab
G
D
S
G
Top View
Ordering Information:
SUD50N02-06P-E3 (Lead (Pb) free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
L = 0.1 mH
T
A
= 25 °C
T
C
= 25 °C
a
Symbol
V
DS
V
GS
T
A
= 25 °C
T
C
= 25 °C
I
D
I
DM
I
S
I
AS
E
AS
P
D
T
J
, T
stg
Limit
20
± 20
26
a
50
b
100
26
45
101
6.8
a
65
- 55 to 175
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Case
Notes:
a. Surface mounted on FR4 board, t
≤
10 s.
b. Limited by package.
t
≤
10 s
Steady State
Symbol
R
thJA
R
thJC
Typical
18
40
1.9
Maximum
22
50
2.3
°C/W
Unit
1/7
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SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
