SUD50N03-06P
N-Channel
30 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V
DS
(V)
30
FEATURES
I
D
(A)
b
84
b
59b
r
DS(on)
(W)
0.0065 at V
GS
= 10 V
0.0095 at V
GS
= 4.5 V
D
TrenchFETr Power MOSFET
D
175
_C
Junction Temperature
D
Optimized for Low-Side Synchronous Rectifier
Operation
D
100 % R
g
Tested
*
APPLICATIONS
D
DC/DC Converters
D
Synchronous Rectifiers
TO-252
D
Drain Connected to Tab
G
D
S
G
Top View
Ordering Information:
SUD50N03-06P
SUD50N03-06P–E3 (Lead (Pb)–free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
_C
UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Single Pulse Avalanche Current
Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
L = 0 1 mH
0.1
T
C
= 25
_C
T
A
= 25
_C
P
D
T
J
, T
stg
T
C
= 25
_C
T
C
= 100
_C
I
D
I
DM
I
S
I
AS
E
AS
Symbol
V
DS
V
GS
Limit
30
"20
84
b
59
b
100
25
45
101.25
88
8.3
a
–55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
t
v
10 sec
Maximum Junction to Ambient
a
Junction-to-Ambient
Maximum Junction-to-Case
Notes
a. Surface Mounted on FR4 Board, t
v
10 sec.
b. Based on maximum allowable Junction Temperature, package limitation current is 50 A.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Steady State
R
thJA
R
thJC
Symbol
Typical
15
40
1.4
Maximum
18
50
1.7
Unit
_C/W
C/W
1/5
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