SUD50N04-07
N-Channel
40 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V
(BR)DSS
(V)
40
r
DS(on)
(Ω)
0.0074 at V
GS
= 10 V
0.011 at V
GS
= 4.5 V
I
D
(A)
65
54
FEATURES
• TrenchFET
®
Power MOSFETS
• 175 °C Junction Temperature
• Low Threshold
RoHS
COMPLIANT
APPLICATIONS
• Motor Control
• Automotive
- 12 V Boardnet
D
TO-252
G
Drain Connected to Tab
G
D
S
Top View
Ordering Information: SUD50N04-07-E3 (Lead (Pb)-free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 175 °C)
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy
a
Power Dissipation
Operating Junction and Storage Temperature Range
a
Symbol
V
DS
V
GS
T
C
= 25 °C
T
C
= 100 °C
I
D
I
DM
I
AR
E
AR
P
D
T
J
, T
stg
L = 0.1 mH
T
C
= 25 °C
Limit
40
± 20
65
c
46
c
100
40
80
65
- 55 to 175
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
b
Junction-to-Case
t
≤
10 sec
Steady State
Symbol
R
thJA
R
thJC
Typical
18
40
1.9
Maximum
22
50
2.3
Unit
°C/W
Notes:
a. Duty cycle
≤
1 %.
b. Surface mounted on 1" FR4 board.
c. Based on maximum allowable Junction Temperature. Package limitation current is 50 A.
1/6
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