SUD50N06-09L
N-Channel
60 V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
V
DS
(V)
60
r
DS(on)
(W)
0.0093 @ V
GS
= 10 V
0.0122 @ V
GS
= 4.5 V
I
D
(A)
a
50
50
D
TrenchFETr Power MOSFET
D
175_C Junction Temperature
APPLICATIONS
D
Automotive
- ABS
- Motor Drives
- Fuel Injection
D
TO-252
G
Drain Connected to Tab
G
D
S
S
Order Number:
SUD50N06-09L
N-Channel MOSFET
Top View
ABSOLUTE MAXIMUM RATINGS (T
C
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Gate-Source Voltage
Continuous Drain Current (T
J
= 175_C)
b
_
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Avalanche Current
Repetitive Avalanche Energy (Duty Cycle
v
1%)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
L = 0.1 mH
T
C
= 25_C
T
A
= 25_C
T
C
= 25_C
T
C
= 100_C
Symbol
V
GS
I
D
I
DM
I
S
I
AR
E
AR
P
D
T
J
, T
stg
Limit
"20
50
50
a
100
50
a
50
125
100
3
b
, 8.3
b, c
-55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
t
p
10 sec.
Maximum Junction-to-Ambient
Maximum Junction-to-Case
Notes:
a. Package limited.
b. Surface mounted on 1” x 1” FR4 Board, t
v
10 sec.
c. t
p
10 sec.
Steady State
R
thJA
R
thJC
Symbol
Typical
15
40
1.2
Limit
18
50
1.5
Unit
_C/W
C/W
1/5
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