SUD50N10-18P
N-Channel
100 V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
V
DS
(V)
100
R
DS(on)
()
0.0185 at V
GS
= 10 V
I
D
(A)
a
50
Q
g
(Typ.)
48 nC
• TrenchFET
®
Power MOSFET
• 100 % R
g
and UIS Tested
• Material categorization:
For definitions of compliance please see
TO-252
APPLICATIONS
•
Primary Side Switch
• Isolated DC/DC Converter
D
Drain Connected to Tab
G
D
S
G
Top
View
Ordering Information:
SUD50N10-18P-E3 (Lead (Pb)-free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
Continuous Drain Current (T
J
= 150 °C)
T
C
= 100 °C
T
A
= 25 °C
T
A
= 100 °C
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Avalanche Energy
T
C
= 25 °C
T
A
= 25 °C
L = 0.1 mH
T
C
= 25 °C
Maximum Power Dissipation
T
C
= 100 °C
T
A
= 25 °C
T
A
= 100 °C
Operating Junction and Storage Temperature Range
T
J
, T
stg
P
D
I
DM
I
S
I
AS
E
AS
I
D
Symbol
V
DS
V
GS
Limit
100
± 20
50
a
39
8.2
b
5.8
b
100
50
a
2
b
45
101
136.4
68.2
3
b
1.5
b
- 55 to 175
°C
W
mJ
A
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
b
Maximum Junction-to-Case
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
Steady State
Symbol
R
thJA
R
thJC
Typical
40
0.85
Maximum
50
1.1
Unit
°C/W
1 / 10
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