SUD50P08-25L
P-Channel
8
0V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V
DS
(V)
- 80
r
DS(on)
(Ω)
0.0252 at V
GS
= - 10 V
0.029 at V
GS
= - 4.5 V
I
D
(A)
a
- 50
- 47
Q
g
(Typ)
55 nC
FEATURES
• TrenchFET
®
Power MOSFET
RoHS
COMPLIANT
TO-252
S
G
Drain Connected to Tab
G
D
S
D
P-Channel MOSFET
Top View
Ordering Information:
SUD50P08-25L-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
Continuous Drain Current (T
J
= 175 °C)
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Pulsed Drain Current
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
T
C
= 25 °C
T
A
= 25 °C
L = 0.1 mH
T
C
= 25 °C
Maximum Power Dissipation
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Operating Junction and Storage Temperature Range
T
J
, T
stg
P
D
I
DM
I
S
I
AS
E
AS
I
D
Symbol
V
DS
V
GS
Limit
- 80
± 20
- 50
a
- 42.5
a
- 12.5
b, c
- 10.5
b, c
- 40
- 50
a
- 6.9
b, c
- 45
101
136
95
8.3
b, c
5.8
b, c
- 55 to 175
°C
W
mJ
A
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
b, d
Maximum Junction-to-Case (Drain)
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 sec.
d. Maximum under steady state conditions is 40 °C/W.
t
≤
10 sec
Steady State
Symbol
R
thJA
R
thJC
Typical
15
0.85
Maximum
18
1.1
Unit
°C/W
1/7
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