SUD70N02-03P
N-Channel
20 V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
V
DS
(V)
20
r
DS(on)
(W)
0.0033 @ V
GS
= 10 V
0.0053 @ V
GS
= 4.5 V
I
D
(A)
a
39
31
D
D
D
D
TrenchFETr Power MOSFET
175_C Junction Temperature
PWM Optimized for High-Efficiency
100% R
g
Tested
APPLICATIONS
D
Synchronous Buck Converter
- Low-Side
- Secondary Synchronous Rectifier
TO-252
D
Drain Connected to Tab
G
D
S
G
Top View
Ordering Information: SUD70N02-03P
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
T
A
= 25_C
T
C
= 25_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
T
A
= 25_C
T
C
= 25_C
P
D
T
J
, T
stg
Limit
20
"20
39
a
70
b
100
37
8.3
a
100
- 55 to 175
Unit
V
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction to Ambient
Junction-to-Ambient
Maximum Junction-to-Case
Notes
a. Surface Mounted on FR4 Board, t
v
10 sec.
b. Limited by package
t
v
10 sec
Steady State
Symbol
R
thJA
R
thJC
Typical
15
40
1.2
Maximum
18
50
1.5
Unit
_C/W
C/W
1/5
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