TK13P25D 参数 Datasheet PDF下载

TK13P25D

MOSFETs

Silicon N-Channel MOS (π-MOS)

1. Applications

•

Switching Voltage Regulators

2. Features

(1)

(2)

(3)

Low drain-source on-resistance: R

DS(ON)

= 0.19

Ω

(typ.)

Low leakage current: I

DSS

= 10

µA

(max) (V

DS

= 250 V)

Enhancement mode: V

th

= 1.5 to 3.5 V (V

DS

= 10 V, I

D

= 1 mA)

3. Packaging and Internal Circuit

1: Gate (G)

2: Drain (D)

3: Source (S)

DPAK

4. Absolute Maximum Ratings (Note) (T

a

= 25



unless otherwise specified)

25

Characteristics

Drain-source voltage

Gate-source voltage

Drain current (DC)

Drain current (pulsed)

Power dissipation

Single-pulse avalanche energy

Avalanche current

Reverse drain current (DC)

Reverse drain current (pulsed)

Channel temperature

Storage temperature

(T

c

= 25)

(Note 2)

(Note 3)

(Note 1)

(Note 1)

(Note 1)

(Note 1)

Symbol

V

DSS

V

GSS

I

D

I

DP

P

D

E

AS

I

AR

I

DR

I

DRP

T

ch

T

stg

Rating

250

±20

13

52

96

78

13

13

52

150

-55 to 150



W

mJ

A

A

Unit

V

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

1/8

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