TK20P04M1
MOSFETs Silicon N-Channel MOS (U-MOS-H)
1. Applications
•
•
DC-DC Converters
Switching Voltage Regulators
2. Features
(1)
(2)
(3)
(4)
(5)
High-speed switching
Low gate charge: Q
SW
= 3.7 nC (typ.)
Low drain-source on-resistance: R
DS(ON)
= 19 mΩ (typ.) (V
GS
= 10 V)
Low leakage current: I
DSS
= 10
µA
(max) (V
DS
= 40 V)
Enhancement mode: V
th
= 1.3 to 2.3 V (V
DS
= 10 V, I
D
= 0.1 mA)
3. Packaging and Internal Circuit
1: Gate
2: Drain (heatsink)
3: Source
DPAK
4. Absolute Maximum Ratings (Note) (T
a
= 25
unless otherwise specified)
25
Characteristics
Drain-source voltage
Gate-source voltage
Drain current (DC)
Drain current (pulsed)
Power dissipation
Single-pulse avalanche energy
Avalanche current
Channel temperature
Storage temperature
(T
c
= 25)
(Note 2)
(Note 1)
(Note 1)
Symbol
V
DSS
V
GSS
I
D
I
DP
P
D
E
AS
I
AR
T
ch
T
stg
Rating
40
±20
20
60
27
10.4
20
150
-55 to 150
W
mJ
A
A
Unit
V
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
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