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TK4P55D 参数 Datasheet PDF下载

TK4P55D图片预览
型号: TK4P55D
PDF下载: 下载PDF文件 查看货源
内容描述: 硅N沟道MOS型(I ?? - 莫萨? | ) [Silicon N Channel MOS Type (π-MOSⅦ)]
分类和应用:
文件页数/大小: 5 页 / 311 K
品牌: SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
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TK4P55D
Silicon N Channel MOS Type (π-MOSⅦ)
Switching Regulator Applications
Low drain-source ON-resistance: R
DS (ON)
= 1.5
Ω
(typ.)
High forward transfer admittance:
⎪Y
fs
= 2.0 S (typ.)
Low leakage current: I
DSS
= 10
μA
(max) (V
DS
= 550 V)
Enhancement-mode: V
th
= 2.4 to 4.4 V (V
DS
= 10 V, I
D
= 1 mA)
6.6
±
0.2
5.34
±
0.13
1.08±0.2
Unit: mm
0.58MAX
Absolute Maximum Ratings
(Ta
=
25°C)
0.07
±
0.07
1.52
Characteristics
Drain-source voltage
Gate-source voltage
DC
Drain current
(Note 1)
Symbol
V
DSS
V
GSS
I
D
I
DP
P
D
E
AS
I
AR
E
AR
T
ch
T
stg
Rating
550
±30
4
16
80
139
4
8
150
−55
to 150
Unit
V
V
A
W
mJ
A
mJ
°C
°C
1
1.
2.
2
3
Pulse (t
=
1 ms)
(Note 1)
Drain power dissipation (Tc
=
25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
GATE
DRAIN
(HEAT
SINK)
3. SOURCE
2.3
±
0.1
0.76
±
0.12
JEDEC
JEITA
TOSHIBA
2-7K1A
Weight : 0.36 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods’’) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Symbol
R
th (ch-c)
R
th (ch-a)
Max
1.56
125
Unit
Internal Connection
2
°C/W
°C/W
Note 1: Please use devices on conditions that the channel temperature is below 150°C.
Note 2: V
DD
= 90 V, T
ch
= 25°C (initial), L = 15 mH, R
G
= 25
Ω,
I
AR
= 4 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
1
3
1/5
www.freescale.net.cn
+0.25
−0.12
1.14MAX
1.01MAX
2.29
6.1
±
0.12
+0.4
10.0
−0.6