TK4P60DA 参数 Datasheet PDF下载

TK4P60DA

MOSFETs Silicon N-Channel MOS (π-MOS)

1. Applications

•

Switching Voltage Regulators

2. Features

(1)

(2)

(3)

(4)

Low drain-source on-resistance: R

DS(ON)

= 1.7

Ω

(typ.) (V

GS

= 10 V)

High forward transfer admittance: |Y

fs

| = 2.2 S (typ.)

Low leakage current: I

DSS

= 10

µA

(max) (V

DS

= 600 V)

Enhancement mode: V

th

= 2.4 to 4.4 V (V

DS

= 10 V, I

D

= 1 mA)

3. Packaging and Internal Circuit

1: Gate

2: Drain (heatsink)

3: Source

DPAK

4. Absolute Maximum Ratings (Note) (T

a

= 25



unless otherwise specified)

25

Characteristics

Drain-source voltage

Gate-source voltage

Drain current (DC)

Drain current (pulsed)

Power dissipation

Single-pulse avalanche energy

Avalanche current

Repetitive avalanche energy

Channel temperature

Storage temperature

(Note 3)

(T

c

= 25)

(Note 2)

(Note 1)

(Note 1)

Symbol

V

DSS

V

GSS

I

D

I

DP

P

D

E

AS

I

AR

E

AR

T

ch

T

stg

Rating

600

±30

3.5

14

80

132

3.5

8

150

-55 to 150

W

mJ

A

mJ



A

Unit

V

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

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