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TK4P60DB 参数 Datasheet PDF下载

TK4P60DB图片预览
型号: TK4P60DB
PDF下载: 下载PDF文件 查看货源
内容描述: 硅N沟道MOS型(I ?? - 莫萨? | ) [Silicon N Channel MOS Type (π-MOSⅦ)]
分类和应用:
文件页数/大小: 5 页 / 310 K
品牌: SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
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TK4P60DB
Silicon N Channel MOS Type (π-MOSⅦ)
Switching Regulator Applications
Low drain-source ON-resistance: R
DS (ON)
= 1.6
Ω
(typ.)
High forward transfer admittance:
⎪Y
fs
= 2.2 S (typ.)
Low leakage current: I
DSS
= 10
μA
(max) (V
DS
= 600 V)
Enhancement-mode: V
th
= 2.4 to 4.4 V (V
DS
= 10 V, I
D
= 1 mA)
6.6
±
0.2
5.34
±
0.13
1.08±0.2
Unit: mm
0.58MAX
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Drain-source voltage
Gate-source voltage
DC
Drain current
(Note 1)
Symbol
V
DSS
V
GSS
I
D
I
DP
P
D
E
AS
I
AR
E
AR
T
ch
T
stg
Rating
600
±30
3.7
14.8
80
147
3.7
8
150
−55
to 150
A
W
mJ
A
mJ
°C
°C
Unit
V
V
2.3
±
0.1
0.76
±
0.12
0.07
±
0.07
1
1.
2.
2
3
Pulse (t
=
1 ms)
(Note 1)
Drain power dissipation (Tc
=
25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
GATE
DRAIN
(HEAT
SINK)
3. SOURCE
JEDEC
JEITA
TOSHIBA
2-7K1A
Weight : 0.36 g (typ.)
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Symbol
R
th (ch-c)
R
th (ch-a)
Max
1.56
125
Unit
2
°C/W
°C/W
Note 1: Please use devices on conditions that the channel temperature is below 150°C.
Note 2: V
DD
= 90 V, T
ch
= 25°C (initial), L = 18.7 mH, R
G
= 25
Ω,
I
AR
= 3.7 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
1
3
1/5
www.freescale.net.cn
1.52
+0.25
−0.12
1.14MAX
1.01MAX
2.29
6.1
±
0.12
+0.4
10.0
−0.6