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2SB1282 参数 Datasheet PDF下载

2SB1282图片预览
型号: 2SB1282
PDF下载: 下载PDF文件 查看货源
内容描述: 达林顿晶体管( 【 4A PNP ) [Darlington Transistor(【 4A PNP)]
分类和应用: 晶体晶体管达林顿晶体管斩波器局域网
文件页数/大小: 9 页 / 300 K
品牌: SHINDENGEN [ SHINDENGEN ELECTRIC MFG.CO.LTD ]
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SHINDENGEN
Darlington Transistor
2SB1282
(TP4J10)
±
4A PNP
OUTLINE DIMENSIONS
Case : ITO-220
Unit : mm
RATINGS
●Absolute Maximum Ratings
Item
Storage Temperature
Junction Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current DC
Collector Current Peak
Base Current DC
Base Current Peak
Total Transistor Dissipation
Dielectric Strength
Mounting Torque
Symbol
Tstg
Tj
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
I
BP
P
T
Vdis
TOR
Conditions
Tc = 25℃
Terminals to case AC 1 minute
(Recommended torque : 0.3N�½�m)
Ratings
-55∼+150
+150
-100
-100
-7
-+4
-+6
-0.3
-0.5
25
2
0.5
Ratings
Max -0.1
Max -0.1
Max -5
Min 1,500
Max 15,000
Max -1.5
Max -2.0
Max 5.0
TYP 20
Max 1
Max 4
Max 2
Unit
V
V
V
A
A
A
A
W
kV
N�½�m
Unit
mA
mA
●Electrical Characteristics (Tc=25℃)
Item
Symbol
Collector Cutoff Current
I
CBO
I
CEO
Emitter Cutoff Current
I
EBO
DC Current Gain
h
FE
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
Thermal Resistance
Transition Frequency
Turn on Time
Storage Time
Fall Time
Conditions
V
CB
= -100V
V
CE
= -100V
V
EB
= -7V
V
CE
= -3V, I
C
= -1A
I
C
= -1A
I
B
= -2mA
Junction to case
V
CE
= 10V, I
C
= -0.4A
I
C
= -1A
I
B1
= I
B2
= -2mA
R
L
= 25Ω
V
BB2
= -4V
V
CE
(sat)
V
BE
(sat)
θjc
f
T
ton
ts
tf
V
V
℃/W
MHz
μs
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd