VR Series Power MOSFET
●Electrical
Characteristics Tc = 25℃
Item
Symbole
V
(BR)DSS
Drain-Source Breakdown Voltage
I
DSS
Zero Gate Voltage Drain Current
I
GSS
Gate-Source Leakage Current
g
fs
Forward Tran�½�conductance
Static Drain-Source On-�½�tate Resistance
R
DS(ON)
V
TH
Gate Threshold Voltage
V
SD
Source-Drain Diode Forward Voltage
θjc
Thermal Resistance
Total Gate Charge
Qg
Input Capacitance
C
iss
Reverse Transfer Capacitance
C
rss
Output Capacitance
C
oss
Turn-On Time
t
on
Turn-Off Time
t
off
Conditions
I
D
= 250μA, V
GS
= 0V
V
DS
= 230V, V
GS
= 0V
V
GS
=
±20V,
V
DS
= 0V
I
D
= 0.5A, V
DS
=
10V
I
D
= 0.5A, V
GS
=
10V
I
D
= 0.2mA, V
DS
=
10V
I
S
= 0.5A, V
GS
= 0V
junction to case
VGS =
10V,
I
D
= 0.5A, V
DD
= 200V
V
DS
=
10V,
V
GS
= 0V, f =
1MH
Z
I
D
= 0.5A, V
GS
=
10V,
R
L
= 200Ω
2SK1194 ( F05E23 )
Min.
230
Typ.
Max.
250
±0.1
0.2
2
0.4
5.5
3
Unit
V
μA
S
Ω
V
2.7
45
4.5
30
30
50
8
4
1.5
20.8
℃/Ｗ
nC
pF
60
100
ns
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
SHINDENGEN [ SHINDENGEN ELECTRIC MFG.CO.LTD ]
